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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE B FEATURES Including two(TR, Diode) devices in TESV. Simplify circuit design. Reduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extreme Super mini type with 5pin.) 1 5 DIM A A1 B 2 EQUIVALENT CIRCUIT (TOP VIEW) Marking 5 4 Type Name 5 4 H 3 4 B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C P P D1 Q1 C 1 2 3 1 2 3 hFE Rank 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 ANODE EMITTER BASE COLLECTOR CATHODE MARK SPEC Type Mark KTX301E Q1 hFE Rank : Y CA KTX301E Q1 hFE Rank : GR CB TESV MAXIMUM RATINGS (Ta=25 TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -50 -50 -5 -150 -30 100 150 -55~150 UNIT V V V SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 100 2 150 -55 150 J D UNIT V V A 2002. 1. 24 Revision No : 1 1/2 KTX301E ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note) hFE Classification Y(4):120~240, SYMBOL ICBO IEBO hFE (Note) VCE(SAT) fT Cob NF GR:200~400. TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 MIN. 120 80 , Rg=10 TYP. -0.1 4 1.0 MAX. -0.1 -0.1 400 -0.3 7 10 dB V UNIT VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.1 , f=1 DIODE D1 CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1 IF=10 TEST CONDITION MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 V UNIT 2002. 1. 24 Revision No : 1 2/2 |
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